 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: SMBTA 42, SMBTA 43 (NPN) q Type SMBTA 92 SMBTA 93 Marking s2D s2E Ordering Code (tape and reel) Q68000-A6479 Q68000-A6483 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS = 74 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values SMBTA 92 SMBTA 93 300 300 200 200 5 500 100 360 150 - 65 ... + 150 Unit V mA mW C 280 210 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBTA 92 SMBTA 93 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBTA 92 SMBTA 93 Collector-base breakdown voltage IC = 100 A SMBTA 92 SMBTA 93 Emitter-base breakdown voltage IE = 100 A Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 C VCB = 160 V, TA = 150 C Emitter-base cutoff current VEB = 3 V DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) SMBTA 92 SMBTA 93 SMBTA 92 SMBTA 93 IEB0 hFE 25 40 25 25 VCEsat - - VBEsat - - - - 0.5 0.4 0.9 - - - - - - - - V V(BR)CE0 300 200 V(BR)CB0 300 200 V(BR)EB0 ICB0 - - - - - - - - - - 250 250 20 20 100 nA nA A A Values typ. max. Unit V - - - - - - - - - - 5 nA - SMBTA 92 SMBTA 93 Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA SMBTA 92 SMBTA 93 Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 20 V, f = 1 MHz SMBTA 92 SMBTA 93 fT Cobo 50 - - MHz pF - - - - 6 8 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 SMBTA 92 SMBTA 93 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 20 V, f = 100 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Operating range IC = f (VCE0) TA = 25 C, D = 0 Semiconductor Group 3 SMBTA 92 SMBTA 93 Collector cutoff current ICB0 = f (TA) VCB = 160 V Collector current IC = f (VBE) VCE = 10 V DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 4 |
Price & Availability of SMBTA92
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |